Semiconductor substrate for manufacturing transistors having back-gates thereon

ABSTRACT

The present invention relates to a semiconductor substrate, an integrated circuit having the semiconductor substrate, and methods of manufacturing the same. The semiconductor substrate for use in an integrated circuit comprising transistors having back-gates according to the present invention comprises: a semiconductor base layer; a first insulating material layer on the semiconductor base layer; a first conductive material layer on the first insulating material layer; a second insulating material layer on the first conductive material layer; a second conductive material layer on the second insulating material layer; an insulating buried layer on the second conductive material layer; and a semiconductor layer on the insulating buried layer, wherein at least one first conductive via is provided between the first conductive material layer and the second conductive material layer to penetrate through the second insulating material layer so as to connect the first conductive material layer with the second conductive material layer, the position of each of the first conductive vias being defined by a region in which a corresponding one of a first group of transistors is to be formed.

CLAIM OF PRIORITY

This application is a Section 371 National Stage Application ofInternational Application No. PCT/CN2011/001993, filed on Nov. 29, 2011,which claims priority to Chinese Application No. CN201110263458.2, filedon Sep. 7, 2011 entitled “Semiconductor Substrate, Integrated CircuitHaving the Semiconductor Substrate, and Methods of Manufacturing theSame”, the entire contents of which are incorporated herein by referencein their entirety.

FIELD OF THE INVENTION

The present invention relates to the field of semiconductor fabrication,and more particularly, to a semiconductor substrate, an integratedcircuit having the semiconductor substrate, and methods of manufacturingthe same.

BACKGROUND OF THE INVENTION

Generally, an integrated circuit (IC) includes a combination of an NMOS(n type Metal-Oxide-Semiconductor) transistor and a PMOS (p typeMetal-Oxide-Semiconductor) transistor formed on a substrate. In order toincrease the efficiency of the very large scale integrated circuits andto reduce the manufacturing costs thereof, a continuous trend is toreduce the feature size of the device, especially the length of the gateelectrode. However, the reduction in the length of the gate electrodewill result in a short-channel effect, thus degrading the performance ofthe semiconductor device and the whole integrated circuit.

The Silicon-On-Insulator (SOI) technique is to introduce a buried oxidelayer (BOX) between the top layer silicon and the back substrate. Theexistence of the buried oxide layer enables a complete dielectricisolation among elements in the integrated circuit, so the SOI-CMOSintegrated circuit substantially avoids the parasitic latch-up effect inthe bulk silicon CMOS circuit. Meanwhile, the complete depletion typeSOI device has a small short-channel effect, can naturally form ashallow junction and has a small leakage current. Therefore, thecomplete depletion SOI-MOSFET having an ultrathin SOI and dual gateshave attracted wide attention. In order to adjust the threshold voltageand to suppress the short-channel effect, a ground plane, which issometimes used for connecting to the semiconductor layer, is formedunder the ultrathin oxide buried layer in the SOI-MOSFET device, and theground plane is made to have a low resistance so as to form a back-gatestructure of the transistor. However, according to conventional methods,in order to connect the ground planes of the NMOSFET and PMOSFET to therespective voltage sources, extra contacts and wirings are needed,resulting in an increase in the area occupied by the device.

Hence, there is a need for an improved method to connect the groundplanes of the NMOSFET and PMOSFET to the respective voltage sources toreduce the area occupied by the device.

SUMMARY OF THE INVENTION

An object of the present invention is to provide an improvedsemiconductor substrate, an integrated circuit having the semiconductorsubstrate, and methods of manufacturing the same, so that it isunnecessary to separately provide for each transistor a contact for theback-gate when manufacturing the integrated circuit, thereby reducingthe area occupied by the transistors.

To achieve the above object, according to a first aspect of the presentinvention, a semiconductor substrate is provided for manufacturingtransistors having back-gates thereon. The semiconductor substratecomprises: a semiconductor base layer; a first insulating material layeron the semiconductor base layer; a first conductive material layer onthe first insulating material layer; a second insulating material layeron the first conductive material layer; a second conductive materiallayer on the second insulating material layer; an insulating buriedlayer on the second conductive material layer; and a semiconductor layeron the insulating buried layer, wherein at least one first conductivevia is provided between the first conductive material layer and thesecond conductive material layer to penetrate through the secondinsulating material layer so as to connect the first conductive materiallayer with the second conductive material layer, the position of each ofthe first conductive vias being defined by a region in which acorresponding one of a first group of transistors is to be formed.

According to a second aspect of the present invention, a semiconductorsubstrate is provided for manufacturing transistors having back-gatesthereon. The semiconductor substrate, in addition to having the samestructure as the semiconductor substrate according to the first aspectof the present invention, further comprises: a plurality of firstisolation structures, the bottom surfaces of the first isolationstructures being flushed with the lower surface of the second insulatingmaterial layer and the top surfaces of the first isolation structuresbeing flushed with or slightly higher than the upper surface of thesemiconductor layer, wherein each of the areas in which transistorshaving back-gates are to be formed is defined by adjacent firstisolation structures.

According to a third aspect of the present invention, a semiconductorsubstrate is provided for manufacturing transistors having back-gatesthereon. The semiconductor substrate, in addition to having the samestructure as the semiconductor substrate according to the first aspectof the present invention, further comprises: another conductive materiallayer between the first insulating material layer and the firstconductive material layer; and another insulating material layer betweenthe another conductive material layer and the first conductive materiallayer, wherein a plurality of second conductive vias are providedbetween the second conductive material layer and the another conductivematerial layer to penetrate through the another insulating materiallayer, the first conductive material layer and the second insulatingmaterial layer so as to connect the second conductive material layerwith the another conductive material layer, the second conductive viasbeing electrically insulated from the first conductive material layer;and wherein the plurality of second conductive vias are divided into afirst group and a second group, the first group including one secondconductive via, and each of the second conductive vias in the secondgroup is defined by a region in which a corresponding one of transistorsof a second conductive type is to be formed.

According to a fourth aspect of the present invention, a semiconductorsubstrate is provided for manufacturing transistors having back-gatesthereon. The semiconductor substrate, in addition to having the samestructure as the semiconductor substrate according to the third aspectof the present invention, further comprises: a plurality of firstisolation structures, the bottom surfaces of the first isolationstructures being flushed with the lower surface of the second insulatingmaterial layer and the top surfaces of the first isolation structuresbeing flushed with or slightly higher than the upper surface of thesemiconductor layer, wherein each of the areas in which transistorshaving back-gates are to be formed is defined by adjacent firstisolation structures.

According to a fifth aspect of the present invention, an integratedcircuit is provided, which, in addition to comprising the semiconductorsubstrate according to the second aspect of the present invention,further comprises: transistors located in a region in which transistorshaving back-gates are to be formed, the transistors comprising a firstgroup of transistors and a second group of transistors, the conductivechannels of the transistors being in the semiconductor layer and theback-gates of the transistors being formed from the second conductivematerial layer; a dielectric layer covering the semiconductor substrateand the transistors; and a conductive contact for electricallyconnecting the back-gates of the first group of transistors to outsideby electrically connecting the first conductive material layer tooutside.

According to a sixth aspect of the present invention, an integratedcircuit is provided, which, in addition to comprising the semiconductorsubstrate according to the fourth aspect of the present invention,further comprises: transistors located in a region in which transistorshaving back-gates are to be formed, the transistors comprising a firstgroup of transistors and a second group of transistors, the conductivechannels of the transistors being in the semiconductor layer and theback-gates of the transistors being formed from the second conductivematerial layer; a dielectric layer covering the semiconductor substrateand the transistors; a first conductive contact for electricallyconnecting the back-gates of the first group of transistors to outsideby electrically connecting the first conductive material layer tooutside; and a second conductive contact penetrating through thedielectric layer, the semiconductor layer, and the insulating buriedlayer to reach the second conductive material layer so as to beelectrically connected with the first group of transistors.

According to a seventh aspect of the present invention, a method ofmanufacturing a semiconductor substrate is provided, the semiconductorsubstrate being used for manufacturing transistors with back-gatesthereon. The method comprises the steps of: providing a semiconductorbase layer; sequentially forming a first insulating material layer, afirst conductive material layer and a second insulating material layeron the semiconductor base layer; patterning the second insulatingmaterial layer to form at least one through hole penetrating through thesecond insulating material layer, the position of each of the throughholes being defined by a region in which a corresponding one of thefirst group of transistors are to be formed; depositing a conductivematerial on the second insulating material layer to form a secondconductive material layer, so that each of the through holes is filledup with the conductive material of the second conductive material layerto form a conductive via; depositing an insulating buried layer on thesecond conductive material layer; and forming a semiconductor layer onthe insulating buried layer.

According to an eighth aspect of the present invention, a method ofmanufacturing a semiconductor substrate is provided, the semiconductorsubstrate being used for manufacturing transistors with back-gatesthereon. The method comprises the steps of: providing a semiconductorbase layer; sequentially forming a first insulating material layer, afirst conductive material layer and a second insulating material layeron the semiconductor base layer; patterning the second insulatingmaterial layer to form a plurality of first through holes penetratingthrough the second insulating material layer, the first through holesbeing divided into a first group and a second group, wherein the firstgroup includes one first through hole, and the position of each of thefirst through holes in the second group is defined by a region in whicha corresponding one of the first group of transistors are to be formed;depositing a conductive material on the second insulating material layerto form a second conductive material layer, so that each of the firstthrough holes is filled up with the conductive material of the secondconductive material layer to form a plurality of first conductive vias;patterning the second conductive material layer, so that at least a partof each of the first conductive vias is covered by a part of the secondconductive material layer, and that the part of the second conductivematerial layer covering at least a part of each of the first conductivevias is separated from other parts of the second conductive materiallayer; depositing an insulating material on the second conductivematerial layer to form a third insulating material layer, so that theinsulating material of the third insulating material layer fills up thespace between the separated parts of the second conductive materiallayer; patterning the third insulating material layer, so that part ofthe second conductive material layer remaining above the firstconductive vias is exposed and that a plurality of second through holesare formed, the position of each of the second through holes beingdefined by a region in which a corresponding one of the second group oftransistors are to be formed; depositing a conductive material on thethird insulating material layer to form a third conductive materiallayer, so that the second through holes are filled up with theconductive material of the third conductive material layer to formsecond conductive vias, and that the exposed part on the secondconductive material layer remaining above the first conductive vias isfilled up with the conductive material of the third conductive materiallayer to form a third conductive via; depositing an insulating buriedlayer on the third conductive material layer; and forming asemiconductor layer on the insulating buried layer.

According to a ninth aspect of the present invention, a method ofmanufacturing a semiconductor substrate is provided, the semiconductorsubstrate being used for manufacturing transistors with back-gatesthereon. The method, in addition to comprising the steps according tothe eighth aspect of the present invention as described above, furthercomprises: forming a plurality of first isolation structures, the bottomsurfaces of the first isolation structures being flushed with the lowersurface of the second insulating material layer, and the top surfaces ofthe first isolation structures being flushed with or slightly higherthan the upper surface of the semiconductor layer, wherein each of theareas in which transistors having back-gates are to be formed is definedby adjacent first isolation structures.

By using the semiconductor substrate manufactured by the methodaccording to the present invention, it is unnecessary to separatelyprovide for each transistor a conductive contact for the back-gate inthe subsequent process of manufacturing the integrated circuit. Instead,the back-gates of at least some transistors can be connected, throughthe corresponding conductive vias, to a common interconnection layer,and the common interconnection layer can be connected to outside throughone contact. Thus the area occupied by at least some transistors can begreatly reduced, which accordingly increases the utilization ratio ofthe wafer. In a preferred embodiment, the back-gates of all nMOSFETs areconnected, via one conductive contact, to outside through a commoninterconnection layer, while the back-gates of all pMOSFETs areconnected, via another conductive contact, to outside through anothercommon interconnection layer. Hence, only two contacts for theback-gates need to be formed on the whole integrated circuit, whichgreatly increases the utilization ratio of the wafer.

The features and advantages of the present invention will become moreapparent by reading the detailed description given below with referenceto the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically shows a cross-sectional view of an integratedcircuit comprising transistors having back-gates according to a firstembodiment of the present invention.

FIGS. 2-10 schematically show cross-sectional views of the respectivestages of manufacturing the integrated circuit comprising transistorshaving back-gates according to the first embodiment of the presentinvention.

FIG. 11 schematically shows a cross-sectional view of an integratedcircuit comprising transistors having back-gates according to a secondembodiment of the present invention.

FIGS. 12-16 schematically show cross-sectional views of the respectivestages of manufacturing the integrated circuit comprising transistorshaving back-gates according to the second embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The exemplary embodiments of the present invention will be described indetail below with reference to the drawings. The drawings are schematicand are not drawn to scale, and they only intend to illustrate theembodiments of the present invention rather than limiting the protectionscope of the present invention. Throughout the drawings, the same orsimilar reference numbers represent the same or similar elements. Tomake the technical solution of the present invention clearer, theprocess steps and devices known in the art are omitted herein. Inaddition, in the context of this description, one layer being on anotherlayer includes both of the case in which the two layers are in directcontact and the case in which other layers or elements are insertedbetween the two layers.

First Embodiment

FIG. 1 shows a schematic cross-sectional view of an integrated circuit10 comprising transistors having back-gates according to a firstembodiment of the present invention.

The integrated circuit 10 comprises: a semiconductor base layer 100; afirst insulating material layer 102 on the semiconductor base layer 100;a first conductive material layer 104 on the first insulating materiallayer 102; a second insulating material layer 106 on the firstconductive material layer 104; a second conductive material layer 108 onthe second insulating material layer 106; a third insulating materiallayer 110 on the second conductive material layer 108; a thirdconductive material layer 112 on the third insulating material layer110; an insulating buried layer 114 on the third conductive materiallayer 112; a semiconductor layer 116 formed on the insulating buriedlayer 114.

The integrated circuit 10 further comprises vias 107 penetrating throughthe third insulating material layer 110 to electrically connect thesecond conductive material layer 108 with the third conductive materiallayer 112. The vias 107 are located under areas in which correspondingtransistors are to be formed. The integrated circuit 10 furthercomprises vias penetrating through the third insulating material layer110, the second conductive material layer 108 and the second insulatingmaterial layer 106 to electrically connect the third conductive materiallayer 112 with the first conductive material layer 104. The vias aredivided into a first group of vias 1031 and a second group of vias1031′. The second group of vias 1031′ includes one via, and the firstgroup of vias 1031 is located under a region in which a correspondingtransistor is to be formed. At a region where the vias 1031 and 1031′penetrate through the second conductive material layer 108, the vias1031 and 1031′ are surrounded by an insulating material so as to beelectrically insulated from the second conductive material layer 108.

The integrated circuit 10 further comprises transistors formed on thesemiconductor layer 116. The conductive channels of the transistors areall formed in the semiconductor layer 116 and the back-gates of thetransistors are all formed from the third conductive material layer 112.As an example, the transistors comprise a transistor 113 of a firstconductive type and a transistor 115 of a second conductive type.Preferably, the first conductive type is different from the secondconductive type. A dielectric layer 118 covers the semiconductor layer116 and the transistors.

The integrated circuit 10 further comprises first isolation structures111 for electrically isolating each of the transistors, and a secondisolation structure 111′. The lower surfaces of isolation structures 111and 111′ are flushed with the lower surface of the third insulatingmaterial layer 110, and the top surfaces of isolation structures 111 and111′ are flushed with or slightly higher than the upper surface of thesemiconductor layer 116. Conductive contacts 117 for electricallyconnecting the second conductive material layer 108 to outside maypenetrate through the dielectric layer 118 and the second isolationstructure 111′ to reach the upper surface of the second conductivematerial layer 108. Alternatively, the conductive contacts 117 maypenetrate through the dielectric layer 118, the semiconductor layer 116,the insulating buried layer 114, the third conductive material layer 112and the third insulating material layer 110 to reach the upper surfaceof the second conductive material layer 108, and at the same time, maybe isolated from each of the transistors by means of the secondisolation structure 111′ and the first isolation structures 111.

The integrated circuit 10 further comprises a conductive contact 119that penetrates through the dielectric layer 118, the semiconductorlayer 116 and the insulating buried layer 114 to reach the thirdconductive material layer 112 so as to be electrically connected withthe second group of vias 1031′. The conductive contact 119 is used forelectrically connecting the first conductive material layer 104 tooutside.

Of course, the integrated circuit 10 further comprises the top gatecontact (not shown), the source/drain contact, etc. of each transistor.In this embodiment, the transistor of the first conductive type is, forexample, an nMOSFET or pMOSFET; and the transistor of the secondconductive type is, for example, a pMOSFET or nMOSFET accordingly.

In the integrated circuit 10 according to this embodiment, a voltage isapplied to the back-gate (i.e. the third conductive material layer 112)of the transistor 113 of the first conductive type by means of the vias107, the second conductive material layer 108 and the conductive contact117; a voltage is applied to the back-gate (i.e. the third conductivematerial layer 112) of the transistor 115 of the second conductive typeby means of the first group of vias 1031, the first conductive materiallayer 104, the second group of vias 1031′ and the conductive contact119. Thus it is unnecessary to separately make a back-gate contact foreach of transistors 113 and transistors 115, which reduces the areaoccupied by a single device and increases the utilization ratio of thewafer.

It shall be noted herein that in other embodiments of the presentinvention, all of transistors 113 of the first conductive type or all oftransistors 115 of the second conductive type can be replaced by a groupof transistors which need to be applied with a specific back-gatevoltage. In this case, it is unnecessary to define the conductive typeof each group of transistors; that is to say, each group of transistorsmay not necessarily have the same conductive type, as long as the sameback-gate voltage can be applied to each group of specific transistorswithout adding extra conductive contacts.

A method of manufacturing the integrated circuit 10 according to thefirst embodiment of the present invention will be described below.

First, a first insulating material layer 102, a first conductivematerial layer 104 and a second insulating material layer 106 aresequentially deposited on a semiconductor base layer 100, as shown inFIG. 2.

Then, the second insulating material layer 106 is patterned by means ofthe conventional photolithography and etching processes to form throughholes 101 therein, as shown in FIG. 3. For purpose of simplicity, FIG. 3shows only one through hole 101, but in fact, many through holes 101 maybe formed, and each of the through holes 101 is located under a regionin which a transistor of a first conductive type and having a back-gateis to be formed. Preferably, the transistor of the first conductive typeis nMOSFET or pMOSFET. In addition, at least one additional through hole101′ is formed. Preferably, in the embodiment of the present invention,one additional through hole 101′ is formed.

Next, a conductive material is deposited on the second insulatingmaterial layer 106 to form a second conductive material layer 108, sothat the through holes 101 and 101′ in the second insulating materiallayer 106 are also filled up with the conductive material of the secondconductive material layer 108, so as to respectively form vias 103 and103′ between the first conductive material layer 104 and the secondconductive material layer 108, as shown in FIG. 4.

Then, the second conductive material layer 108 is patterned by means ofthe conventional photolithography and etching processes, so that atleast a part of each of the vias 103 and 103′ is covered by a part ofthe second conductive material layer 108, and that the part of thesecond conductive material layer 108 that covers at least a part of eachof the vias 103 and 103′ is separated from other parts of the secondconductive material layer 108, as shown in FIG. 5. FIG. 5 shows that theparts of the second conductive material layer 108 remaining above thevias 103 and 103′ have the same width as that of the vias 103 and 103′,respectively. However, the present invention is not limited to this. Infact, the parts of the second conductive material layer 108 remainingabove the vias 103 and 103′ may have the narrower (as shown in FIG. 5 a)or wider (as shown in FIG. 5 b) width than that of the vias 103 and103′, respectively; or the parts of the second conductive material layer108 remaining above the vias 103 and 103′ may partially cover the vias103 and 103′ (as shown in FIG. 5 c), respectively.

Subsequently, an insulating material is deposited on the secondconductive material layer 108 to form a third insulating material layer110, so that the insulating material of the third insulating materiallayer 110 fills up the space between the separated parts of the secondconductive material layer. Then, the third insulating material layer 110is patterned by means of conventional photolithography and etchingtechniques, so that parts of the second conductive material layer 108remaining above the vias 103 and 103′ are exposed and that a pluralityof through holes 105 are formed, as shown in FIG. 6. Each of the throughholes 105 is located under a region in which a transistor of a secondconductive type and having a back-gate is to be formed. Preferably, thesecond conductive type is different from the first conductive type,namely, the transistor of the second conductive type is pMOSFET ornMOSFET. Preferably, the transistors of the first conductive type andthe transistors of the second conductive type are arranged alternately.

Next, a conductive material is deposited on the third insulatingmaterial layer 110 to form a third conductive material layer 112.Meanwhile, the parts of the third insulating material layer 110 thathave been removed by etching are also filled up with the conductivematerial, so that vias 107 are formed at the position of the throughholes 105, and that vias are formed at the positions of the exposedparts above the vias 103 and 103′, which, together with the vias 103 and103′, electrically connect the first conductive material layer 104 tothe third conductive material layer 112, as shown in FIG. 7. The thirdconductive material layer 112 can be used for forming the back-gates ofthe transistors in the subsequent processes.

Then, an insulating buried layer 114 is deposited on the thirdconductive material layer 112, as shown in FIG. 7. Preferably, theinsulating buried layer 114 is a thin oxide layer. Afterwards, asemiconductor layer 116 is formed onto the insulating buried layer 114,as shown in FIG. 8. Specifically, the semiconductor layer 116 can beformed onto the insulating buried layer 114 by means of, for example,the SmartCut™ technique, thereby forming a Semiconductor-On-Insulator(SOI) structure.

Alternatively, after forming the semiconductor layer 116 onto theinsulating buried layer 114, a plurality of first isolation structures111 and second insulation structures 111′ are formed by means ofprocesses well known in the art. Preferably, both the first isolationstructures 111 and second insulation structures 111′ are shallow trenchisolation (STI) structures. Preferably, the number of the secondinsulation structures 111′ is one. The bottom surfaces of the isolationstructures 111 and 111′ are flushed with the lower surface of the thirdinsulating material layer 110, and the top surfaces of the isolationstructures 111 and 111′ are flushed with or slightly higher than theupper surface of the semiconductor layer 116. A region 109 in which thetransistors are to be formed is located between adjacent first isolationstructures 111, and the via above the via 103′ is isolated from the viasabove the vias 107 and vias 103 by means of the first insulationstructures 111. As an example, as shown in FIG. 9, the via 103′ islocated between two adjacent first isolation structures 111, i.e., inthe area 109′.

Before or after forming the first isolation structures 111 and thesecond isolation structures 111′, the third conductive material layer112 may have a low resistance by ion implantation therein so as to forma back-gate structure.

The method of manufacturing the integrated circuit comprisingtransistors having back-gates according to the first embodiment of thepresent invention, in addition to the above-described steps for formingthe semiconductor substrate, further comprises the steps of formingtransistors 113 of a first conductive type in the corresponding area 109above the vias 103; and forming transistors 115 of a second conductivetype in the corresponding area 109 above the vias 107, as shown in FIG.10. The processes for forming the transistors are known in the art, soin order to highlight the features and advantages of the presentinvention, such processes will not be described in details herein. Then,a dielectric layer 118 which covers the transistors of the first andsecond conductive types and the formed semiconductor substrate and a topgate contact (not shown in the figure) and a source/drain contact ofeach transistor are formed by means of the processes well known in theart. Moreover, a conductive contact 117 penetrating through thedielectric layer 118 and the second isolation structure 111′ is formedby means of the processes well known in the art, which connects thesecond conductive material layer 108 to outside. Thus, the conductivecontact 117 is embedded into the second isolation structure 111′ andconnects the back-gates (i.e. the third conductive material layer 112)of some or all of the transistors 113 of the first conductive type tooutside via the second conductive material layer 108. Further, aconductive contact 119 is formed in the corresponding area 109′ abovethe via 103′, which penetrates through the dielectric layer 118, thesemiconductor layer 116 and the insulating buried layer 114 and iselectrically connected with the via 103′ so as to connect the firstconductive material layer 104 to outside, thus the conductive contact119 can connect the back-gates (i.e. the third conductive material layer112) of some or all of the transistors 115 of the second conductive typeto outside via the first conductive material layer 104, as shown in FIG.1.

Although in the embodiment as shown, the conductive contact 117 isformed in the second isolation structure 111′, the present invention isnot limited to this, and those skilled in the art can form theconductive contact 117 at any suitable position in any appropriate way,as long as it can electrically connect the second conductive materiallayer 108 to outside. For example, the conductive contact 117 may alsobe formed between the isolation structures to penetrate through thedielectric layer 118, the semiconductor layer 116, the insulating buriedlayer 114, the third conductive material layer 112 and the thirdinsulating material layer 110 to reach the second conductive materiallayer 108. Before forming the conductive contacts 117 and/or 119, acontact lining layer may also be formed from, for example, Ti, TiN, or acombination thereof.

Second Embodiment

In the first embodiment described above, the back-gates of thetransistors of the first and second conductive types are all connectedto outside through the conductive material layer thereunder, but thepresent invention is not limited to this, it also allows the back-gatesof only transistors of the first conductive type or the back-gates ofonly transistors of the second conductive type to be connected tooutside through the conductive material layer thereunder.

FIG. 11 shows a schematic cross-sectional view of an integrated circuit20 comprising transistors having back-gates according to a secondembodiment of the present invention.

The integrated circuit 20 comprises: a semiconductor base layer 200; afirst insulating material layer 202 on the semiconductor base layer 200;a first conductive material layer 204 on the first insulating materiallayer 202; a second insulating material layer 206 on the firstconductive material layer 204; a second conductive material layer 208 onthe second insulating material layer 206; an insulating buried layer 214on the second conductive material layer 208; a semiconductor layer 216formed on the insulating buried layer 214.

The integrated circuit 20 further comprises vias 203 penetrating throughthe second insulating material layer 206 to electrically connect thesecond conductive material layer 208 with the first conductive materiallayer 204. The vias 203 are located under areas in which thecorresponding transistors are to be formed.

The integrated circuit 20 further comprises transistors formed on thesemiconductor layer 216. The conductive channels of the transistors areall formed in the semiconductor layer 216 and the back-gates of thetransistors are all formed from the second conductive material layer208. As an example, the transistors comprise transistors 213 of a firstconductive type and transistors 215 of a second conductive type.Preferably, the first conductive type is different from the secondconductive type. A dielectric layer 218 covers the semiconductor layer216 and the transistors.

The integrated circuit 20 further comprises first isolation structures211 for electrically isolating each of the transistors, and secondisolation structures 211′. The lower surfaces of isolation structures211 and 211′ are flushed with the lower surface of the second insulatingmaterial layer 206, and the top surfaces of isolation structures 211 and211′ are flushed with or slightly higher than the upper surface of thesemiconductor layer 216. A conductive contact 217 for electricallyconnecting the first conductive material layer 204 to outside maypenetrate through the dielectric layer 218 and the second isolationstructures 211′ to reach the upper surface of the first conductivematerial layer 204. Alternatively, the conductive contact 217 maypenetrate through the dielectric layer 218, the semiconductor layer 216,the insulating buried layer 214, the second conductive material layer208 and the second insulating material layer 206 to reach the uppersurface of the first conductive material layer 204, and at the sametime, may be isolated from each of the transistors by means of thesecond isolation structures 211′ and the first isolation structures 211.

In the case where the first conductive material layer 204 iselectrically connected to outside through the conductive contact 217,since the back-gates (i.e. the second conductive material layer 208) ofthe transistors 213 of the first conductive type are electricallyconnected with the first conductive material layer 204, the back-gatevoltages of the transistors 213 can be controlled by means of theconductive contact 217 by applying a voltage from outside. Thus it isunnecessary to separately make a back-gate contact for each of thetransistors 213, which reduces the area occupied by a single device andincreases the utilization ratio of the wafer. As for the transistors 215whose back-gate voltages are not applied through the conductive contact217, their back-gate contacts can be made by means of the conventionaltechniques (as exemplarily shown in FIG. 11 with respect to thetransistors 215 of the second conductive type), and this will not bedescribed in detail any more because it is well known to those skilledin the art.

Of course, the integrated circuit 20 further comprises the top gatecontact (not shown), the source/drain contact, etc. of each transistor.In this embodiment, the transistor of the first conductive type is, forexample, an nMOSFET or pMOSFET; and the transistor of a secondconductive type is, for example, a pMOSFET or nMOSFET, accordingly.

It shall be noted herein that in other embodiments of the presentinvention, all of transistors 213 of the first conductive type can bereplaced by a group of transistors which need to be applied with aspecific back-gate voltage. In this case, it is unnecessary to definethe conductive type of the group of transistors; that is to say, thegroup of transistors may not necessarily have the same conductive type,as long as the same back-gate voltage can be applied to the group ofspecific transistors without adding extra conductive contacts.

A method of manufacturing the integrated circuit 20 according to thesecond embodiment of the present invention will be described below.

First, a first insulating material layer 202, a first conductivematerial layer 204 and a second insulating material layer 206 aresequentially deposited on a semiconductor base layer 200, as shown inFIG. 12.

Then, the second insulating material layer 206 is patterned by means ofthe conventional photolithography and etching processes to form throughholes 201 therein, as shown in FIG. 13. Each of the through holes islocated under a region in which a transistor of a first conductive typeand having a back-gate is to be formed. Preferably, the transistor ofthe first conductive type is nMOSFET or pMOSFET.

Next, a conductive material is deposited on the second insulatingmaterial layer 206 to form a second conductive material layer 208, sothat the through holes 201 formed in the second insulating materiallayer 206 are also filled up with the conductive material of the secondconductive material layer 208, so as to form a plurality of conductivevias 203 between the first conductive material layer 204 and the secondconductive material layer 208, as shown in FIG. 14. The secondconductive material layer 208 may be used for forming the back-gates ofthe transistors in the subsequent processes.

Subsequently, an insulating buried layer 214 is deposited on the secondconductive material layer 208. Preferably, the insulating buried layer214 is a thin oxide layer. Afterwards, a semiconductor layer 216 isformed onto the insulating buried layer 214, as shown in FIG. 15.Specifically, the semiconductor layer 216 can be formed onto theinsulating buried layer 214 by means of, for example, the SmartCut™technique, thereby forming a Semiconductor-On-Insulator (SOI) structure.

Alternatively, after forming the semiconductor layer 216 onto theinsulating buried layer 214, a plurality of first isolation structures211 and second insulation structures 211′ are formed by means ofprocesses well known in the art. Preferably, both the first isolationstructures 211 and second insulation structures 211′ are STI structures.The bottom surfaces of the isolation structures 211 and 211′ are flushedwith the lower surface of the second insulating material layer 206, andthe top surfaces of the isolation structures 211 and 211′ are flushedwith or slightly higher than the upper surface of the semiconductorlayer 216. A region 209 in which the transistors of the first conductivetype are to be formed is located between adjacent first isolationstructures 211, and a region 209″ in which the transistors of the secondconductive type are to be formed is located between the neighboringareas 209. The area 209″ is also located between adjacent firstisolation structures 211, as shown in FIG. 16. Preferably, the secondconductive type is different from the above-mentioned first conductivetype, namely, the transistor of the second conductive type is pMOSFET ornMOSFET. Preferably, the transistors of the first conductive type andthe transistors of the second conductive type are arranged alternately.

Before or after forming the first isolation structures 211 and thesecond isolation structures 211′, the second conductive material layer208 may have a low resistance by ion implantation therein so as to forma back-gate structure.

The method of manufacturing the integrated circuit comprisingtransistors having back-gates according to the second embodiment of thepresent invention, in addition to the above-described steps for formingthe semiconductor substrate, further comprises the steps of formingtransistors 213 of a first conductive type in the area 209; and formingtransistors 215 of a second conductive type in the area 209″. Theprocesses for forming the transistors are known in the art, so in orderto highlight the features and advantages of the present invention, suchprocesses will not be described in details herein.

Then, a dielectric layer 218 which covers the transistors of the firstand second conductive types and the formed semiconductor substrate and atop gate contact (not shown in the figure) and a source/drain contact ofeach transistor are formed by means of the processes well known in theart. Moreover, a conductive contact 217 penetrating through thedielectric layer 218 and the second isolation structure 211′ is formedby means of the processes well known in the art, which connects thefirst conductive material layer 204 to outside. Thus, the conductivecontact 217 is embedded into the second isolation structure 211′ andconnects the back-gates (i.e. the second conductive material layer 208)of some or all of the transistors 213 of the first conductive type tooutside via the first conductive material layer 204. Further, aconductive contact 220 penetrating through the dielectric layer 218, thesemiconductor layer 216 and the insulating buried layer 214 to reach thesecond conductive material layer 208 is formed in a region which isdefined by adjacent first isolation structures 211 and in which each ofthe transistors 215 of the second conductive type is located, as shownin FIG. 11. For purpose of simplicity, FIG. 11 only shows one transistor215 of the second conductive type and one corresponding conductivecontact 220; but in fact, there may be a plurality of transistors 215 ofthe second conductive type and corresponding conductive contacts 220.Each of the conductive contacts 220 is used for connecting the back-gate(i.e. the second conductive material layer 208) of a corresponding oneof the transistors of the second conductive type to outside.

Although in the embodiment as shown, the conductive contact 217 isformed in the second isolation structure 211′, the present invention isnot limited to this, and those skilled in the art can form theconductive contact 217 at any suitable position in any appropriate way,as long as it can electrically connect the first conductive materiallayer 204 to outside. For example, the conductive contact 217 may alsobe formed between the isolation structures to penetrate through thedielectric layer 218, the semiconductor layer 216, the insulating buriedlayer 214, the second conductive material layer 208 and the secondinsulating material layer 206 to reach the first conductive materiallayer 204. Before forming the conductive contacts 217, a contact lininglayer may also be formed from, for example, Ti, TiN, or a combinationthereof.

It shall be noted that in the present invention, the expression of“first”, “second”, “third”, “fourth”, etc. used before the technicalterms is not intended to limit the technical terms, but they are onlyused for differentiating the technical terms. In addition, in order tofacilitate the description, the transistors in the present invention aredivided into the first conductive type and the second conductive type,one same back-gate voltage is applied to transistors of the firstconductive type, while another same back-gate voltage is applied totransistors of the second conductive type. However, the presentinvention is not limited to this, and one conductive contact can be usedto connect the back-gates of some transistors of different conductivetypes to outside as desired, i.e., the same voltage is applied to theback-gates of some transistors of different conductive types, whileanother conductive contact can be used to connect the back-gates of someother transistors of different conductive types to outside. That is, thetransistors whose back-gate voltages need to be controlled can begrouped in the present invention according to the requirement of thedevice.

Processes and Materials

In the embodiments described above, the layers involved may be depositedby means of Chemical Vapor Deposition (CVD), Physical Vapor Deposition(PVD), Pulsed Laser Deposition (PLD), Atomic Layer Deposition (ALD),Plasma Enhanced Atomic Layer Deposition (PEALD) or other appropriateprocesses as well known in the art. The photolithography and etchingprocesses involved may be performed by Reactive Ion Etching (RIE),Electron Cyclotron Resonance (ECR) etching, Inductive Coupling Plasma(ICP) etching, etc. as well known in the art. The semiconductorsubstrates 100 and 200 involved are preferably silicon wafers. Ofcourse, any other suitable substrates may be used as required. Thefirst, second and third insulating material layers are preferably oxidelayers. The first, second and third conductive material layers arepreferably polysilicon layers, and can be made to have a low resistancethrough ion implantation in which n-type ion doping may be performed byusing, for example, As and P, or p-type ion doping may be performed byusing, for example, In and B, with the doping concentration beingusually 10¹⁸˜10²¹ cm⁻³. The material of the semiconductor layers 116 and216 may include one of Si, SiGe, SiC and SiGeC, or any combinationthereof. The isolation material of the isolation structures may beoxide, nitride or a combination thereof. The material forming theconductive contacts 111, 211 and 211′ can be, but not limited to, Cu,Al, W, polysilicon, or a combination thereof.

While the invention has been described in detail by means of the variousexemplary embodiments, it will be understood by those skilled in the artthat many replacements and variants can be made to the present inventionwithout departing from the spirit and scope of the present invention asdefined by the appended claims.

What is claimed is:
 1. A semiconductor substrate for manufacturingtransistors having back-gates thereon, comprising: a semiconductor baselayer; a first insulating material layer on the semiconductor baselayer; a first conductive material layer on the first insulatingmaterial layer; a second insulating material layer on the firstconductive material layer; a second conductive material layer on thesecond insulating material layer; an insulating buried layer on thesecond conductive material layer; a semiconductor layer on theinsulating buried layer, a plurality of first isolation structures, thebottom surfaces of the first isolation structures being flushed with thelower surface of the second insulating material layer, and the topsurfaces of the first isolation structures being flushed with orslightly higher than the upper surface of the semiconductor layer,wherein at least one first conductive via is provided between the firstconductive material layer and the second conductive material layer topenetrate through the second insulating material layer so as to connectthe first conductive material layer with the second conductive materiallayer, the position of each of the first conductive vias being definedby a region in which a corresponding one of a first group of transistorsis to be formed; and wherein each of the areas in which transistorshaving back-gates are to be formed is defined by adjacent firstisolation structures.
 2. The semiconductor substrate according to claim1, wherein the semiconductor layer includes one of Silicon-On-Insulator,Silicon-Germanium-On-Insulator, Silicon-Carbide-On-Insulator, andSilicon-Germanium-Carbon-On-Insulator, or any combination thereof. 3.The semiconductor substrate according claim 1, wherein both the firstconductive material layer and the second conductive material layer aredoped polysilicon layers.
 4. An integrated circuit having thesemiconductor substrate according to claim 1, comprising: transistorslocated in the area in which transistors having back-gates are to beformed, the transistors comprising a first group of transistors and asecond group of transistors, the conductive channels of the transistorsbeing in the semiconductor layer, and the back-gates of the transistorsbeing formed from the second conductive material layer; a dielectriclayer covering the semiconductor substrate and the transistors; and aconductive contact for electrically connecting the back-gates of thefirst group of transistors to outside by electrically connecting thefirst conductive material layer to outside.
 5. The integrated circuitaccording to claim 4, wherein the conductive contact is located betweenadjacent first isolation structures and penetrates through thedielectric layer, the semiconductor layer, the insulating buried layer,the second conductive material layer and the second insulating materiallayer to reach the first conductive material layer.
 6. The integratedcircuit according to claim 4, wherein the semiconductor substratefurther comprises a plurality of second isolation structures, the bottomsurfaces of which are flushed with the lower surface of the secondinsulating material layer, and the top surfaces of which are flushedwith or slightly higher than the upper surface of the semiconductorlayer, and wherein the conductive contact penetrates through thedielectric layer and one of the second isolation structures and isembedded into the one of the second isolation structures.
 7. Theintegrated circuit according to claim 4, wherein the first group oftransistors and the second group of transistors are pMOSFETs andnMOSFET, respectively, or are nMOSFETs and pMOSFETs, respectively. 8.The integrated circuit according to claim 4, wherein the conductivecontact is formed of Cu, A1, W, or polysilicon.
 9. The semiconductorsubstrate according to claim 1, further comprising: another conductivematerial layer between the first insulating material layer and the firstconductive material layer; and another insulating material layer betweenthe another conductive material layer and the first conductive materiallayer, wherein a plurality of second conductive vias are providedbetween the second conductive material layer and the another conductivematerial layer to penetrate through the another insulating materiallayer, the first conductive material layer and the second insulatingmaterial layer so as to connect the second conductive material layerwith the another conductive material layer, the second conductive viasbeing electrically insulated from the first conductive material layer;and wherein the plurality of second conductive vias are divided into afirst group and a second group, the first group including one secondconductive via, and each of the second conductive vias in the secondgroup is defined by a region in which a corresponding one of transistorsof a second conductive type is to be formed.
 10. The semiconductorsubstrate according to claim 9, wherein around the second conductivevias, the second insulating material layer extends downwards to beembedded into the first conductive material layer so as to electricallyinsulating the second conductive vias from the first conductive materiallayer.
 11. The semiconductor substrate according to claim 10, furthercomprising: a plurality of first isolation structures, the bottomsurfaces of the first isolation structures being flushed with the lowersurface of the second insulating material layer, and the top surfaces ofthe first isolation structures being flushed with or slightly higherthan the upper surface of the semiconductor layer, wherein each of theareas in which transistors having back-gates are to be formed is definedby adjacent first isolation structures.
 12. An integrated circuit havingthe semiconductor substrate according to claim 10, comprising:transistors located in the region in which transistors having back-gatesare to be formed, the transistors comprising a first group oftransistors and a second group of transistors, the conductive channelsof the transistors being in the semiconductor layer and the back-gatesof the transistors being formed from the second conductive materiallayer; a dielectric layer covering the semiconductor substrate and thetransistors; a first conductive contact for electrically connecting theback-gates of the first group of transistors to outside by electricallyconnecting the first conductive material layer to outside; and a secondconductive contact penetrating through the dielectric layer, thesemiconductor layer and the insulating buried layer to reach the secondconductive material layer so as to be electrically connected with thefirst group of transistors.
 13. The integrated circuit according toclaim 12, wherein the first conductive contact is located betweenadjacent first isolation structures and penetrates through thedielectric layer, the semiconductor layer, the insulating buried layer,the second conductive material layer and the second insulating materiallayer to reach the first conductive material layer.
 14. The integratedcircuit according to claim 12, wherein the semiconductor substratefurther comprises a second isolation structure, the bottom surface ofwhich is flushed with the lower surface of the second insulatingmaterial layer, and the top surface of which is flushed with or slightlyhigher than the upper surface of the semiconductor layer, and whereinthe first conductive contact penetrates through the dielectric layer andone of the second isolation structures, and is embedded into the one ofthe second isolation structures.
 15. The integrated circuit according toclaim 12, wherein the first group of transistors and the second group oftransistors are pMOSFETs and nMOSFET, respectively, or are nMOSFETs andpMOSFETs, respectively.
 16. The integrated circuit according claim 12,wherein the conductive contact is formed of Cu, Al, W, or polysilicon.17. A method of manufacturing a semiconductor substrate, thesemiconductor substrate being used for manufacturing transistors withback-gates thereon, the method comprising: providing a semiconductorbase layer; sequentially forming a first insulating material layer, afirst conductive material layer and a second insulating material layeron the semiconductor base layer; patterning the second insulatingmaterial layer to form at least one through hole penetrating through thesecond insulating material layer, the position of each of the throughholes being defined by a region in which a corresponding one of thefirst group of transistors are to be formed; depositing a conductivematerial on the second insulating material layer to form a secondconductive material layer, so that each of the through holes is filledup with the conductive material of the second conductive material layerto form a conductive via; depositing an insulating buried layer on thesecond conductive material layer; and forming a semiconductor layer onthe insulating buried layer; forming a plurality of first isolationstructures, the bottom surfaces of the first isolation structures beingflushed with the lower surface of the second insulating material layer,and the top surfaces of the first isolation structures being flushedwith or slightly higher than the upper surface of the semiconductorlayer, wherein each of the areas in which transistors having back-gatesare to be formed is defined by adjacent first isolation structures. 18.A method of manufacturing a semiconductor substrate, the semiconductorsubstrate being used for manufacturing transistors with back-gatesthereon, the method comprising the steps of: providing a semiconductorbase layer; sequentially forming a first insulating material layer, afirst conductive material layer and a second insulating material layeron the semiconductor base layer; patterning the second insulatingmaterial layer to form a plurality of first through holes penetratingthrough the second insulating material layer, the first through holesbeing divided into a first group and a second group, wherein the firstgroup includes one first through hole, and the position of each of thefirst through holes in the second group is defined by a region in whicha corresponding one of a first group of transistors are to be formed;depositing a conductive material on the second insulating material layerto form a second conductive material layer, so that each of the firstthrough holes is filled up with the conductive material of the secondconductive material layer to form a plurality of first conductive vias;patterning the second conductive material layer, so that at least a partof each of the first conductive vias is covered by a part of the secondconductive material layer, and that the part of the second conductivematerial layer covering at least a part of each of the first conductivevias is separated from other parts of the second conductive materiallayer; depositing an insulating material on the second conductivematerial layer to form a third insulating material layer, so that theinsulating material of the third insulating material layer fills up thespace between the separated parts of the second conductive materiallayer; patterning the third insulating material layer, so that part ofthe second conductive material layer remaining above the firstconductive vias is exposed and that a plurality of second through holesare formed, the position of each of the second through holes beingdefined by a region in which a corresponding one of the second group oftransistors are to be formed; depositing a conductive material on thethird insulating material layer to form a third conductive materiallayer, so that the second through holes are filled up with theconductive material of the third conductive material layer to formsecond conductive vias, and that the exposed part on the secondconductive material layer remaining above the first conductive vias isfilled up with the conductive material of the third conductive materiallayer to form a third conductive via; depositing an insulating buriedlayer on the third conductive material layer; and forming asemiconductor layer on the insulating buried layer.
 19. The methodaccording to claim 18, further comprising: forming a plurality of firstisolation structures, the bottom surfaces of the first isolationstructures being flushed with the lower surface of the second insulatingmaterial layer, and the top surfaces of the first isolation structuresbeing flushed with or slightly higher than the upper surface of thesemiconductor layer, and wherein each of the areas in which transistorshaving back-gates are to be formed is defined by adjacent firstisolation structures.